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US 11,776,793 B2Granted
Plasma source with ceramic electrode plate
AssigneeApplied Materials, Inc.
InventorsRobert B. Moore, Jared Ahmad Lee, Marc David Shull, Tsutomu Tanaka, Alexander V. Garachtchenko, Dmitry A. Dzilno
Life of this patent
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Abstract
A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.
Claims20
A plasma source assembly comprising:
- a first electrode comprising a conductive plate having a top surface, a bottom surface, and an outer peripheral edge;
- a second electrode comprising a conductive plate having a top surface, a bottom surface, and an outer peripheral edge;
- a dielectric spacer separating the first electrode and the second electrode and disposed at the outer peripheral edge of the first electrode and the outer peripheral edge of the second electrode, the second electrode made from a reaction-bonded ceramic material and comprising a plurality of apertures therein;
- and
- a power feed electrically connected to the first electrode.
2 more elements
A plasma source assembly comprising:
- a first electrode comprising a conductive plate having a top surface, a bottom surface, and an outer peripheral edge;
- a second electrode comprising a conductive plate having a top surface, a bottom surface, and an outer peripheral edge;
- a dielectric spacer separating the first electrode and the second electrode and disposed at the outer peripheral edge of the first electrode and the outer peripheral edge of the second electrode, the second electrode made from a reaction bonded silicon carbide and a plurality of apertures therein, and wherein the plurality of apertures comprises elongate slots having a width and a length in a range of from 2 to 3 times greater than the width;
- and
- a power feed electrically connected to the first electrode.
2 more elements
A method of processing a substrate in a substrate processing chamber, the method comprising:
- placing a substrate in the substrate processing chamber comprising a first electrode comprising a conductive plate having a top surface, a bottom surface, an outer peripheral edge and a plurality of apertures allowing a gas to flow therethrough;
- a second electrode comprising a conductive plate made from a ceramic material having a top surface, a bottom surface, an outer peripheral edge a plurality of apertures allowing a gas to flow therethrough;
- a dielectric spacer separating the first electrode and the second electrode and disposed at the outer peripheral edge of the first electrode and the outer peripheral edge of the second electrode;
- and
- a power feed electrically connected to the first electrode;
- and
- forming a plasma between the first electrode and the second electrode.
4 more elements
Dependencies are inferred from the claim text.