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US 11,776,655 B2Granted
Memory device virtual blocks using half good blocks
AssigneeMicron Technology, Inc.
InventorsSri Rama Namala, Jung Sheng Hoei, Jianmin Huang, Ashutosh Malshe, Xiangang Luo
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Abstract
Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).
Claims20
A memory device comprising:
- a processor;
- a memory, storing instructions, which when executed, cause the processor to perform operations comprising:
- identifying that a first deck of a first three-dimensional NAND block in the memory device has a defect of a type in a first identified list of defect types and that a second deck of the first three-dimensional NAND block does not have a defect from a second identified list of defect types;
- identifying that a first deck of a second three-dimensional NAND block in the memory device has a defect of a type in the first identified list of defect types and that a second deck of the second three-dimensional NAND block does not have a defect from the second identified list of defect types;
- forming a virtual block using the second deck of the first three-dimensional NAND block and the second deck of the second three-dimensional NAND block;
- and
- storing data in the virtual block by storing a first portion of the data in the second deck of the first three-dimensional NAND block and a second portion of the data in the second deck of the second three-dimensional NAND block.
4 more elements
A non-transitory machine-readable medium, storing instructions, which when executed, cause a processor to perform operations comprising:
- identifying that a first deck of a first three-dimensional NAND block in a memory device has a defect of a type in a first identified list of defect types and that a second deck of the first three-dimensional NAND block does not have a defect from a second identified list of defect types;
- identifying that a first deck of a second three-dimensional NAND block in the memory device has a defect of a type in the first identified list of defect types and that a second deck of the second three-dimensional NAND block does not have a defect from the second identified list of defect types;
- forming a virtual block using the second deck of the first three-dimensional NAND block and the second deck of the second three-dimensional NAND block;
- and
- storing data in the virtual block by storing a first portion of the data in the second deck of the first three-dimensional NAND block and a second portion of the data in the second deck of the second three-dimensional NAND block.
2 more elements
A method comprising:
- identifying that a first deck of a first three-dimensional NAND block in a memory device has a defect of a type in a first identified list of defect types and that a second deck of the first three-dimensional NAND block does not have a defect from a second identified list of defect types;
- identifying that a first deck of a second three-dimensional NAND block in the memory device has a defect of a type in the first identified list of defect types and that a second deck of the second three-dimensional NAND block does not have a defect from the second identified list of defect types;
- forming a virtual block using the second deck of the first three-dimensional NAND block and the second deck of the second three-dimensional NAND block;
- and
- storing data in the virtual block by storing a first portion of the data in the second deck of the first three-dimensional NAND block and a second portion of the data in the second deck of the second three-dimensional NAND block.
2 more elements
Dependencies are inferred from the claim text.