Threshold voltage based on program/erase cycles

A system, comprising:

• a processing device;
• and
• a memory device communicatively coupled to the processing device,
• wherein the processing device is to:
• responsive to the memory device operating in a first portion of a service life of the memory device, programming at least one memory cell of the memory device to a first particular threshold voltage corresponding to a desired data state, wherein the first portion of the service life is defined by a program erase cycles (PEC) count from zero to a threshold PEC count;
• responsive to the memory device operating in a second portion of the service life, programming at least one memory cell of the memory device to a second particular threshold voltage corresponding to the desired state, wherein the second portion of service life is defined by a PEC count greater than the threshold PEC count,
• wherein the threshold PEC count, the first particular threshold voltage, the second particular threshold voltage, the first portion of the service life, and the second portion of service life are determined prior to initiation of the service life and without reading a threshold voltage of the memory device, and
• wherein the second portion of the service life is subsequent to the first portion of the service life.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:

• responsive to a memory device operating in a first portion of a service life, program at least one memory cell of the memory device to a first particular threshold voltage corresponding to a desired data state with a relatively small read window,
• wherein the first portion of the service life is defined by a program erase cycles (PEC) count from zero to a threshold PEC count;
• and
• responsive to the memory device operating in a first portion of a service life, program at least one memory cell of the memory device to a second particular threshold voltage corresponding to the desired data state with a relatively large read window,
• wherein the second portion of service life is defined by a PEC count greater than the threshold PEC count, and
• wherein the threshold PEC count, the first particular threshold voltage, the second particular threshold voltage, the first portion of the service life, and the second portion of service life are determined prior to initiation of the service life and without reading a threshold voltage of the memory device.