Back to results
US 11,776,618 B2Granted
Memory device with in-memory searching array and operation method thereof for implementing finite state machine
AssigneeMacronix International Co., Ltd.
InventorPo-Hao Tseng
Life of this patent
Estimating the term…
Abstract
The present invention discloses a memory device and operation method thereof. The operation method comprises: programming a plurality of first strings of a plurality of string pairs representing a finite state machine (FSM) to an in-memory-searching (IMS) array of a memory device; programming a plurality of second strings of the string pairs to a working memory of the memory device; and programming a string representing a starting state of the FSM to a buffer of the memory device.
Claims8
A memory device, comprising:
- a first driver circuit;
- a second driver circuit;
- an in-memory-searching (IMS) array, comprising a plurality of memory cells, the memory cells coupled to the first driver circuit via a plurality of word lines, and coupled to the second driver circuit via a plurality of third signal lines, the memory cells configured to store a plurality of first strings of a plurality of string pairs generated according to a finite state machine (FSM);
- a sensing circuitry, the sensing circuitry comprising a plurality of sensing units coupled to the memory cells via a plurality of second signal lines;
- a working memory, coupled to the sensing circuitry, the working memory having a plurality of memory addresses one-to-one corresponding to the sensing units, and configured to store a plurality of second strings of the string pairs;
- and
- a buffer, coupled to the working memory and the first driver circuit, the buffer configured to store a string representing a starting state of the FSM while the FSM is initialized,
- each of the first strings comprises a first portion codewords and a second portion codewords, the first portion codewords represents a current state, and the second portion codewords represents a current input.
5 more elements
An operation method of memory device, comprising:
- programming a plurality of first strings of a plurality of string pairs representing a finite state machine (FSM) to an in-memory-searching (IMS) array of a memory device;
- programming a plurality of second strings of the string pairs to a working memory of the memory device;
- and
- programming a string representing a starting state of the FSM to a buffer of the memory device,
- wherein each of the first strings comprises a first portion codewords and a second portion codewords, the first portion codewords represents a current state, and the second portion codewords represents a current input.
2 more elements
Dependencies are inferred from the claim text.