Memory with per die temperature-compensated refresh control
OwnerJames S. Rehmeyer, Jason M. Johnson +1inventors
InventorsJames S. Rehmeyer, Jason M. Johnson, Joo-Sang Lee
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Abstract
Memory devices, systems, and associated methods with per die temperature-compensated refresh control, and associated methods, are disclosed herein. In one embodiment, a memory device includes a plurality of memory cells and a sensor configured to measure a temperature of the memory device. The memory device determines a frequency at which it is receiving refresh commands. The memory device is further configured to skip refresh operations of the memory cells based, at least in part, on the determination and on the temperature of the memory device.
Claims20
A memory device, comprising:
- a plurality of memory cells;
- a first counter having a first value corresponding to refresh operations of the memory cells;
- a second counter different from the first counter and having a second value corresponding to the refresh operations of the memory cells;
- and
- a sensor configured to measure a temperature of the memory device,
- wherein the memory device is configured to:
- skip, based at least in part on the first value, a first number of refresh operations of the memory cells when the temperature of the memory device is less than a first threshold value and greater than a second threshold value, the first number being greater than zero;
- and
- skip, based at least in part on the second value, a second number of the refresh operations of the memory cells when the temperature of the memory device is less than the second threshold value, the second number being greater than the first number.
A memory device, comprising:
- a plurality of memory cells;
- and
- a sensor configured to measure a temperature of the memory device,
- wherein the memory device is configured to:
- determine whether the memory device is receiving refresh commands at a first frequency or at a second frequency greater than the first frequency;
- skip a first number of refresh operations of the memory cells when (i) the memory device determines the memory device is receiving the refresh commands at the second frequency and (ii) the temperature of the memory device is less than a first threshold value;
- and
- skip a second number of refresh operations of the memory cells different from the first number when (i) the memory device determines the memory device is receiving the refresh commands at the second frequency and (ii) the temperature of the memory device is less than a second threshold value different from the first threshold value.
A memory device, comprising:
- a plurality of memory cells;
- a first counter having a first value corresponding to refresh operations of the memory cells and
- a second counter having a second value corresponding to the refresh operations of the memory cells,
- wherein the memory device is configured to:
- determine that the memory device is receiving refresh operations at an increased frequency;
- based at least in part on the determination and on the first value of the counter, skip a first number of the refresh operations of the memory cells;
- and
- based at least in part on the determination and the second value of the second counter, skip a second number of the refresh operations of the memory cells different than the first number.
Dependencies are inferred from the claim text.