Sensing scheme for STT-MRAM using low-barrier nanomagnets
AssigneeGlobalFoundries U.S. Inc.
InventorsAmogh Agrawal, Ajey Poovannummoottil Jacob, Bipul C. Paul
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Abstract
The present disclosure relates to a structure including a non-fixed read-cell circuit configured to switch from a first state to a second state based on a state of a memory cell to generate a sensing margin.
Claims19
A structure comprising a non-fixed read-cell circuit configured to switch from a first state to a second state based on a state of a memory cell to generate a sensing margin, wherein a positive read voltage is directly applied to a drain of an access transistor connected to the memory cell,
- wherein the non-fixed read cell-circuit is further configured to reset to a parallel state before a read cycle.
A circuit comprising a read magnetic tunnel junction (MTJ) element which has a first terminal connected to a first input of an operational amplifier and a second terminal connected to an output of the operational amplifier,
- wherein the first input of the operational amplifier is connected to a memory cell through a bitline and a second input of the operational amplifier is connected to a voltage bias.
Dependencies are inferred from the claim text.