Magnetic recording array and magnetoresistance effect unit

A magnetic recording array, comprising:

• a plurality of units,
• wherein each of the units has a first magnetoresistance effect element, a second magnetoresistance effect element, and a writing transistor,
• wherein each of the first magnetoresistance effect element and the second magnetoresistance effect element has a wiring and a laminate which is laminated on the wiring,
• wherein the laminate has a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer in order from a side closer to the wiring,
• wherein the writing transistor is connected to each of the wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element,
• wherein the wiring of the first magnetoresistance effect element and the wiring of the second magnetoresistance effect element are electrically connected in series at the time of writing,
• wherein a writing current flows through each of the wirings, and
• wherein a direction of the writing current flowing in the wiring of the first magnetoresistance effect element and a direction of the writing current flowing in the wiring of the second magnetoresistance effect element are opposite to each other.