Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

A magnetoresistance memory device comprising:

• a switching element that includes a variable resistance material;
• a layer stack on the switching element, the layer stack including a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer;
• and
• hafnium oxide, aluminum oxide, scandium oxide, gadolinium oxide, tantalum oxide, or yttrium oxide on a side surface of the layer stack.

A method of manufacturing a magnetoresistance memory device, comprising:

• forming a first layer stack that includes a variable resistance material;
• forming a second layer stack and a third layer stack on the first layer stack, each of the second layer stack and the third layer stack including a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer;
• forming, on a side surface of the second layer stack, a first insulator comprising a first material having an etching rate for first etching lower than an etching rate of the first stack layer for the first etching;
• forming a second insulator comprising the first material on a side surface of the third layer stack;
• and
• partially removing the first layer stack by the first etching, using the second layer stack, the third layer stack, and the first insulator, and the second insulator as a mask.