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US 11,776,585 B2Granted
Memory device including a pass transistor circuit and a discharge transistor circuit
AssigneeSK hynix Inc.
InventorsSang Hyun Sung, Jin Ho Kim, Sung Lae Oh
Life of this patent
Estimating the term…
Abstract
A memory device includes a pass transistor circuit included in a first wafer, and configured to transfer an operating voltage to row lines of a memory cell array; and a discharge transistor circuit included in a second wafer that overlaps with the first wafer in a vertical direction, and configured to transfer a discharge voltage to at least one of the row lines.
Claims17
A memory device comprising:
- a pass transistor circuit included in a first wafer, and configured to transfer an operating voltage to row lines of a memory cell array;
- and
- a discharge transistor circuit included in a second wafer that overlaps with the first wafer in a vertical direction, and configured to transfer a discharge voltage to at least one of the row lines.
A memory device comprising:
- a pass transistor circuit included in a first wafer, and coupled to row lines of a memory cell array;
- and
- a discharge transistor circuit included in a second wafer that overlaps with the first wafer in a vertical direction and is coupled to the pass transistor circuit through at least one discharge line.
Dependencies are inferred from the claim text.