US 11,776,295 B2 · Detection device with thin film transistors

Abstract

A detection device is provided and includes substrate; drive electrode provided on substrate; detection electrode provided on substrate and capacitively coupling with drive electrode; first thin film transistor connected to drive electrode and second thin film transistor connected to first thin film transistor, first insulating film and second insulating film both stacked on substrate, wherein first thin film transistor comprises first gate electrode and first semiconductor layer, second thin film transistor comprises second gate electrode and second semiconductor layer, first semiconductor layer and second semiconductor layer are in same layer and are located between first insulating film and second insulating film, first gate electrode opposes first semiconductor layer via first insulating film, second gate electrode opposes second semiconductor layer via second insulating film, and distance from first gate electrode to first semiconductor layer is greater than distance from second gate electrode to second semiconductor layer.

Claims23

Dependent claims

A detection device comprising:

a substrate;
a drive electrode provided on the substrate;
a detection electrode provided on the substrate and capacitively coupling with the drive electrode;
a first thin film transistor connected to the drive electrode and a second thin film transistor connected to the first thin film transistor,
a first insulating film and a second insulating film both stacked on the substrate,
wherein
the first thin film transistor comprises a first gate electrode and a first semiconductor layer,
the second thin film transistor comprises a second gate electrode and a second semiconductor layer,
the first semiconductor layer and the second semiconductor layer are in a same layer and are located between the first insulating film and the second insulating film,
the first gate electrode opposes the first semiconductor layer via the first insulating film,
the second gate electrode opposes the second semiconductor layer via the second insulating film, and
a distance from the first gate electrode to the first semiconductor layer is greater than a distance from the second gate electrode to the second semiconductor layer.

9 more elements

A detection device comprising:

a substrate;
a drive electrode provided on the substrate;
a detection electrode provided on the substrate and capacitively coupling with the drive electrode;
a pair of first thin film transistors and a pair of second thin film transistors,
one first thin film transistor connected to one end of the drive electrode and one second thin film transistor connected to the one first thin film transistor,
the other first thin film transistor connected to the other end of the drive electrode and the other second thin film transistor connected to the other first thin film transistor,
a first insulating film and a second insulating film both stacked on the substrate,
wherein
each of the first thin film transistors comprises a first gate electrode and a first semiconductor layer,
each of the second thin film transistors comprises a second gate electrode and a second semiconductor layer,
the first semiconductor layer and the second semiconductor layer are in a same layer and are located between the first insulating film and the second insulating film,
the first gate electrode opposes the first semiconductor layer via the first insulating film,
the second gate electrode opposes the second semiconductor layer via the second insulating film, and
a distance from the first gate electrode to the first semiconductor layer is greater than a distance from the second gate electrode to the second semiconductor layer.

11 more elements

Dependencies are inferred from the claim text.

Detection device with thin film transistors

Life of this patent

Detection device with thin film transistors

Life of this patent

Abstract

Claims23