Bonding process for forming semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hang Chang, I-Shi Wang, Jen-Hao Liu
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.
Claims20
A semiconductor device structure, comprising:
- a first substrate comprising a first face and a second face opposite the first face;
- a second substrate bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate;
- and
- one or more recesses that are arranged in the second face of the first substrate and that are configured to compensate for thermal expansion or thermal contraction of the semiconductor device structure;
- wherein a first recess of the one or more recesses extends in a first direction substantially parallel to an outer edge of the first substrate;
- wherein a second recess of the one or more recesses extends in a second direction perpendicular to the first direction;
- and
- wherein the first recess and the second recess perpendicularly bisect one another.
A semiconductor device structure, comprising:
- a first substrate comprising a first face and a second face opposite the first face;
- a second substrate bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate;
- and
- one or more recesses that are arranged in the second face of the first substrate and that are configured to compensate for thermal expansion or thermal contraction;
- wherein the one or more recesses includes a first recess having a first pair of distal ends, wherein a first end of the first pair of distal ends is spaced apart from an outer perimeter of the first substrate;
- wherein the one or more recesses includes a second recess having a second pair of distal ends, wherein a second end of the second pair of distal ends is spaced apart from the outer perimeter of the first substrate;
- wherein the first recess traverses the second recess.
A semiconductor device structure, comprising:
- a first die comprising a first face and a second face opposite the first face;
- a second die bonded to the first face of the first die such that the second face of the first die faces away from the second die;
- and
- one or more thermal expansion recesses in the second face of the first die, the one or more thermal expansion recesses including a first thermal expansion recess defined by a first set of sidewalls corresponding to outer edges of the first thermal expansion recess, and a second thermal expansion recess defined by a second set of sidewalls corresponding to outer edges of the second thermal expansion recess,
- wherein the first set of sidewalls extend from the outer edges of the second thermal expansion recess such that a first portion of the first set of sidewalls is on a first side of the second thermal expansion recess and a second portion of the first set of sidewalls is on a second side of the second thermal expansion recess, and
- wherein the second set of sidewalls extend from the outer edges of the first thermal expansion recess such that a first portion of the second set of sidewalls is on a first side of the first thermal expansion recess and a second portion of the second set of sidewalls is on a second side of the first thermal expansion recess.
Dependencies are inferred from the claim text.