Porous polishing pad and process for producing the same all fees
AssigneeSK enpulse Co., Ltd.
InventorsHye Young Heo, Jang Won Seo, Jong Wook Yun, Sunghoon Yun, Jaein Ahn
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Abstract
Embodiments relate to a porous polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polishing pad can be adjusted in light of the volume thereof. Thus, the plurality of pores have an apparent volume-weighted average pore diameter in a specific range, thereby providing a porous polishing pad that is excellent in such physical properties as polishing rate and the like.
Claims20
A porous polishing pad, which comprises a urethane-based resin;
- and a plurality of pores,
- wherein the plurality of pores have an apparent volume-weighted average pore diameter (AVWAPD) of 20 μm to 50 μm as calculated according to the following Equation 1:
- Σ
- (
- diameter
-
-
- of
-
-
- pores
- ×
- apparent
-
-
- volume
-
-
- of
-
-
- pores
- )
- total
-
-
- apparent
-
-
- volume
-
-
- of
-
-
- pores
- [
- Equation
-
-
- 1
- ]
- and wherein when the AVWAPD is X,
- the plurality of pores comprises first pores having a diameter of greater than 0 μm to X μm and second pores having a diameter of greater than X μm, and
- the total apparent volume of the first pores is greater than the total apparent volume of the second pores.
Dependencies are inferred from the claim text.