Resistive random-access memory and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsShu-Hung Yu, Chun-Hung Cheng, Chuan-Fu Wang
Life of this patent
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Abstract
A ReRAM device includes a dielectric layer, a bottom electrode, a data storage layer, a metal covering layer, and a top electrode. The dielectric layer has a recess. At least a portion of the bottom electrode is exposed through the recess. The data storage layer is disposed on a sidewall and a bottom surface of the recess, electrically contacts with the bottom electrode, and has a top portion lower than an opening of the recess. The metal covering layer blanket covers the data storage layer, has an extension portion covering the top portion, and connects to the sidewall of the recess. The top electrode is disposed in the recess, and is electrically contact with the metal covering layer.
Claims12
A resistive random-access memory (ReRAM) device, comprising:
- a dielectric layer, having a recess;
- a bottom electrode, wherein at least a portion of the bottom electrode is exposed through the recess;
- a data storage layer, disposed on a sidewall and a bottom surface of the recess, electrically contacting with the bottom electrode, and having a top portion lower than an opening of the recess;
- a metal covering layer, blanket covering the data storage layer, having an extension portion covering the top portion, and connecting to the sidewall of the recess;
- and
- a top electrode, disposed in the recess, and electrically contacting with the metal covering layer.
A method for fabricating a ReRAM device, comprising:
- forming a recess in a dielectric layer, through which at least a portion of a bottom electrode is exposed;
- forming a data storage layer to cover a sidewall and a bottom surface of the recess, so as to make the data storage layer electrically contacting with the bottom electrode;
- forming a metal covering layer, blanket over the data storage layer;
- performing an etch-back process on the data storage layer and the metal covering layer to make a first top portion of the data storage layer and a second top portion of the metal covering layer both lower than an opening of the recess;
- performing a metal sputtering process on the metal covering layer to form an extension portion on the second top portion and covering the first top portion, and to make the extension portion connected to the sidewall of the recess;
- and
- forming a top electrode on the metal covering layer and electrically contacting with the metal covering layer.
Dependencies are inferred from the claim text.