Etch-resistant doped scavenging carbide electrodes
AssigneeInternational Business Machines Corporation
InventorsJohn Rozen, Marinus Hopstaken, Yohei Ogawa, Masanobu Hatanaka, Takashi Ando, Kazuhiro Honda
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Abstract
A resistive switching memory stack, comprised of a bottom electrode, an oxide layer located on the bottom electrode; and a top electrode located on the oxide layer. The top electrode is comprised of a first layer, an intermediate layer located directly on the first layer, and a top layer located on top of the intermediate layer. Wherein the intermediate layer is comprised of a doped carbide active layer.
Claims16
A microelectronic structure comprising:
- a multilayered electrode, wherein the multilayered electrode is comprised of:
- a first layer;
- an intermediate layer located directly on the first layer, wherein the intermediate layer is comprised of a doped carbide active layer, wherein a doping material for the doped carbide active layer is comprised of N;
- and
- a top layer located directly on top of the intermediate layer.
A resistive switching memory stack, comprising:
- a bottom electrode;
- an oxide layer located on the bottom electrode;
- and
- a top electrode located on the oxide layer, wherein the top electrode is a multilayered electrode that is comprised of:
- a first layer;
- an intermediate layer located directly on the first layer, wherein the intermediate layer is comprised of a doped carbide active layer, wherein a doping material for the doped carbide active layer is comprised of N;
- and
- a top layer located directly on top of the intermediate layer.
A method for forming a resistive switching memory stack, the method comprising:
- forming a bottom electrode from one or more conductors;
- forming an oxide layer located on the bottom electrode;
- and
- forming a top electrode located on top of the oxide layer, wherein forming the top electrode comprises:
- forming a bottom layer directly on top of the oxide layer, wherein the bottom layer is selected from a group consisting of TiN or TaN;
- forming an intermediate layer comprised of a doped carbide active layer, wherein the doped carbide active layer is formed by alternating deposition of carbide and dopant-containing layers, wherein the carbide of the doped carbide active layer is selected from a group consisting of AlxCy, Al4C3, or TixAlyCz;
- and
- forming a top layer directly on top of the intermediate layer, wherein the top layer is selected from a group consisting of TiN or TaN.
Dependencies are inferred from the claim text.