Resistive random access memory and method of fabricating the same

A resistive random access memory, comprising:

• a first electrode layer and a second electrode layer, disposed opposite to each other;
• a variable resistance layer, located between the first electrode layer and the second electrode layer;
• an oxygen exchange layer, located between the variable resistance layer and the second electrode layer;
• a conductive layer, laterally surrounding a sidewall of the oxygen exchange layer;
• a first barrier layer, laterally located between the conductive layer and the oxygen exchange layer and vertically between the oxygen exchange layer and the variable resistance layer;
• and
• a second barrier layer, vertically located between the conductive layer and the second electrode layer and vertically located between the second electrode layer and the oxygen exchange layer,
• wherein a bottom surface of the conductive layer is in physical contact with a top surface of the variable resistance layer.