Magnetoresistive element and magnetic memory

A magnetic memory in which an element spacing between magnetoresistance effect elements is 15 nm or less,

• the magnetoresistance effect element comprising:
• a first reference layer (B1);
• a first non-magnetic layer (2) provided adjacent to the first reference layer (B1);
• a first magnetic layer (3) provided adjacent to an opposite side of the first non-magnetic layer (2) to the first reference layer (B1);
• a non-magnetic coupling layer (4) provided adjacent to an opposite side of the first magnetic layer (3) to the first non-magnetic layer (2);
• a second magnetic layer (5) provided adjacent to an opposite side of the non-magnetic coupling layer (4) to the first magnetic layer (3);
• and
• a second non-magnetic layer (6) provided adjacent to an opposite side of the second magnetic layer (5) to the non-magnetic coupling layer (4), wherein
• the first reference layer (B1) includes a ferromagnetic substance and has a magnetization direction fixed to a direction perpendicular to a film surface,
• the first magnetic layer (3) and the second magnetic layer (5) each include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and
• a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to each thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t1 (nm) of the first magnetic layer (3), and a film thickness t2 (nm) of the second magnetic layer (5) satisfy relationships D<t1 and D≤t2, or D≤t1 and D<t2.