Electronic device

An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:

• a magnetic tunnel junction structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer:
• and
• an intermediate layer interposed between the tunnel barrier layer and the pinned layer,
• wherein any one or more of the free layer and the pinned layer include a multilayer synthetic anti-ferromagnetic structure including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer interposed between the first ferromagnetic layer and the second magnetic layer,
• wherein the spacer layer includes n non-magnetic layers and n−1 magnetic layers that are alternately stacked, wherein n indicates an odd number equal to or greater than 3,
• wherein the first ferromagnetic layer, the second ferromagnetic layer and the n−1 magnetic layers form an antiferromagnetic exchange coupling through the n non-magnetic layers,
• wherein the non-magnetic layers and the magnetic layers have a face centered cubic (fcc) (111) structure, and the intermediate layer has a bcc (001) structure.