Conductive alloy layer in magnetic memory devices and methods of fabrication

A system, comprising:

• a transistor above a substrate, the transistor comprising:
• a drain contact coupled to a drain;
• a source contact coupled to a source;
• a gate contact coupled to a gate;
• a memory device, the memory device comprising:
• a bottom electrode coupled with the drain contact;
• a conductive layer comprising an alloy of ruthenium and tungsten above the bottom electrode, wherein the conductive layer is not more than 50 atomic percent
• tungsten and the balance is substantially ruthenium and tungsten concentration within the conductive layer decreases with greater distance from the bottom electrode;
• a magnetic tunnel junction (MTJ) over the conductive layer, the MTJ comprising:
• a free magnet;
• and
• a fixed magnet between the free magnet and the conductive layer;
• a synthetic antiferromagnetic (SAF) structure between the fixed magnet and the conductive layer;
• a seed layer between the SAF structure and the conductive layer;
• and
• a tunnel barrier between the fixed magnet and the free magnet.