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US 11,770,978 B2Granted
Magnetization rotational element, magnetoresistance effect element, semiconductor element, magnetic recording array, and method for manufacturing magnetoresistance effect element
AssigneeTDK Corporation
InventorsYugo Ishitani, Tomoyuki Sasaki, Yohei Shiokawa
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Abstract
A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
Claims4
A method for manufacturing a magnetoresistance effect element comprising:
- a film formation step of forming a laminate in which a second ferromagnetic layer, a nonmagnetic layer, a first ferromagnetic layer, and a first spin generation layer are laminated in order;
- a processing step of forming a columnar body by etching the laminate;
- and
- a wiring forming step of forming a spin-orbit torque wiring by performing film formation of an insertion layer and a second spin generation layer in order on a first surface of the columnar body,
- wherein the insertion layer has a lower electrical resistivity than the first spin generation layer and the second spin generation layer.
2 more elements
Dependencies are inferred from the claim text.