Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJiann-Horng Lin, Kun-Yi Li, Han-Ting Lin, Huan-Just Lin, Chen-Jung Wang, Sin-Yi Yang
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Abstract
A method for fabricating magnetic tunnel junction (MTJ) pillars is provided. The method includes following operations. A MTJ stack of layers including a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer is provided. A first patterning step is carried out by using a reactive ion etching. In the first patterning step, the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalk of the pillar structures.
Claims20
A method for fabricating magnetic tunnel junction (MTJ) pillars, the method comprising:
- providing a magnetic tunneling junction (MTJ) stack of layers, wherein the MTJ stack of layers comprising a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer;
- carrying out a first patterning step by using a reactive ion etching, wherein the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalls of the pillar structures, wherein the first patterning step comprises using a first process gas for etching and then using a second process gas for forming the protection layer, and
- carrying out a second patterning step by using an ion beam etching, wherein the first magnetic layer is etched such that the pillar structures formed in the first patterning step extend downwardly and include the etched first magnetic layer.
A method for fabricating a semiconductor structure, the method comprising:
- providing a magnetic tunneling junction (MTJ) stack of layers, wherein the MTJ stack of layers comprising a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer;
- carrying out a chemical treatment using a process gas containing fluorocarbon to etch the tunnel barrier layer,
- forming a protection layer covering sidewalls of the tunnel barrier layer, wherein the protection layer comprises carbon (C), hydrogen (H), and oxygen (O),
- patterning the first magnetic layer to create conductive particles,
- depositing the conductive particles on the protection layer, and
- forming a cap dielectric layer over the conductive particles.
A method for fabricating a memory device, the method_comprising:
- forming a magnetic tunneling junction (MTJ) stack of layers over a bottom electrode layer, wherein the MTJ stack of layers comprises a bottom magnetic layer, a tunnel barrier layer overlying the bottom magnetic layer, and a top magnetic layer overlying the tunnel barrier layer;
- forming a top electrode layer over the MTJ stack of layers;
- patterning the top electrode layer, the top magnetic layer and the tunnel barrier layer;
- forming a protection layer over sidewalls of the top electrode layer, the top magnetic layer and the tunnel barrier layer, wherein the protection layer comprises carbon (C), hydrogen (H), and oxygen (O);
- patterning the bottom magnetic layer and the bottom electrode layer to create conductive particles,
- depositing the conductive particles on the protection layer, and
- forming a cap dielectric layer over the conductive particles.
Dependencies are inferred from the claim text.