US 11,770,964 B2 · Thin-film encapsulation

Abstract

A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 1011 cm−3 when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 1011 cm−3, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.

Claims20

Dependent claims

An organic light emitting diode (OLED) device, wherein an encapsulation structure is disposed over an OLED by a process comprising:

depositing a first barrier layer comprising at least one of silicon nitride (SiN), silicon oxynitride (SiON), or silicon dioxide (SiO2) over the OLED;
depositing a buffer layer over the first barrier layer;
and
depositing a second barrier layer comprising at least one of SiN, SiON, or SiO2 over the buffer layer, wherein at least one of the first barrier layer or the second barrier layer is deposited via a high-density plasma (HDP) assisted chemical vapor deposition (CVD) process and at least one of the first barrier layer or the second barrier layer is deposited via a capacitively coupled plasma (CCP) assisted CVD process.

1 more element

An organic light emitting diode (OLED) device, wherein an encapsulation structure is disposed over an OLED by a process comprising:

depositing a first barrier layer comprising at least one of silicon nitride (SiN), silicon oxynitride (SiON), or silicon dioxide (SiO2) over the OLED via at least one of a high-density plasma (HDP) assisted chemical vapor deposition (CVD) process or a capacitively coupled plasma (CCP) assisted CVD process;
depositing a buffer layer over the first barrier layer;
and
depositing a second barrier layer comprising at least one of SiN, SiON, or SiO2 over the buffer layer via at least one of the HDP assisted CVD process or the CCP assisted CVD process, wherein at least one of the first barrier layer or the second barrier layer is deposited via the HDP assisted CVD process and at least one of the first barrier layer or the second barrier layer is deposited via the CCP assisted CVD process.

1 more element

Dependencies are inferred from the claim text.

Thin-film encapsulation

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Thin-film encapsulation

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Abstract

Claims20