Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYuta Endo, Hideomi Suzawa
Life of this patent
Estimating the term…
Abstract
A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, and an electrode. The first transistor and the second transistor include an oxide, a gate insulator over the oxide, and a gate. The electrode is connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor. The channel length of the first transistor is longer than the short side of the first conductor. The channel length of the second transistor is longer than the short side of the second conductor.
Claims6
A semiconductor device comprising:
- a first insulator;
- a first transistor comprising an oxide comprising a channel formation region over the first insulator;
- a second transistor comprising the oxide comprising a channel formation region over the first insulator;
- a first conductor over the first transistor and the second transistor;
- a second conductor over the first conductor;
- a third conductor over the first transistor;
- a fourth conductor over the third conductor;
- a fifth conductor over the fourth conductor;
- a sixth conductor over the second transistor;
- a seventh conductor over the sixth conductor;
- an eighth conductor over the seventh conductor;
- and
- a second insulator,
- wherein the fourth conductor and the fifth conductor overlap with each other with the second insulator therebetween, and
- wherein the seventh conductor and the eighth conductor overlap with each other with the second insulator therebetween.
Dependencies are inferred from the claim text.