Semiconductor storage device
AssigneeKioxia Corporation
InventorKenji Watanabe
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor storage device includes: a stacked body in which a plurality of conductive layers are separated from each other and are stacked; a pillar which extends in a stacking direction and includes memory cells to be formed at intersections with at least some of the plurality of conductive layers; an upper insulating layer arranged on the stacked body; a plug which extends in the stacking direction inside the upper insulating layer and is connected to the upper end portion of the pillar; and a spacer insulating layer which surrounds the plug and has a lower dielectric constant than a dielectric constant of the upper insulating layer.
Claims19
A semiconductor storage device comprising:
- a stacked body in which a plurality of conductive layers are separated from each other and are stacked;
- a pillar which extends in a stacking direction of the plurality of conductive layers inside the stacked body and includes memory cells to be formed at intersections with at least some of the plurality of conductive layers;
- an upper insulating layer arranged on the stacked body;
- a plug which extends in the stacking direction inside the upper insulating layer and is connected to an upper end portion of the pillar;
- and
- a spacer insulating layer which surrounds the plug inside the upper insulating layer and has a lower dielectric constant than a dielectric constant of the upper insulating layer.
A semiconductor storage device comprising:
- a stacked body in which a plurality of conductive layers are separated from each other and are stacked;
- a pillar which extends in a stacking direction of the plurality of conductive layers inside the stacked body and includes memory cells to be formed at intersections with at least some of the plurality of conductive layers;
- an upper insulating layer arranged on the stacked body, the upper insulating layer including an intermediate insulating layer made of a different material from other parts of the upper insulating layer at a predetermined position in the stacking direction, the intermediate insulating layer having a higher dielectric constant than dielectric constants of the other parts of the upper insulating layer;
- and
- a plug which extends in the stacking direction inside the upper insulating layer and is connected to an upper end portion of the pillar, wherein
- the intermediate insulating layer is separated from the plug and surrounds a periphery of the plug at the predetermined position in the stacking direction.
A semiconductor storage device comprising:
- a stacked body in which a plurality of conductive layers are separated from each other and are stacked;
- a pillar which extends in a stacking direction of the plurality of conductive layers inside the stacked body and includes memory cells to be formed at intersections with at least some of the plurality of conductive layers;
- an upper insulating layer arranged on the stacked body, the upper insulating layer including an intermediate insulating layer made of a different material from other parts of the upper insulating layer at a predetermined position in the stacking direction;
- a plug which extends in the stacking direction inside the upper insulating layer and is connected to an upper end portion of the pillar;
- and
- a spacer insulating layer which surrounds the plug inside the upper insulating layer, has a diameter, defined by an outer edge thereof, being larger than a diameter of the upper end portion of the pillar, and is interposed between the plug and the intermediate insulating layer at the predetermined position in the stacking direction.
Dependencies are inferred from the claim text.