Semiconductor devices including an edge insulating layer

A semiconductor device comprising:

• a substrate including a cell area and an interface area;
• a gate electrode disposed in the substrate within the cell area and extending in a first direction;
• a plurality of bit lines intersecting the gate electrode and extending in a second direction intersecting the first direction;
• an interlayer insulating layer disposed on the substrate within the interface area;
• and
• an edge insulating layer contacting the plurality of bit lines and extending in the first direction,
• wherein at least a portion of the edge insulating layer is disposed within the interface area,
• wherein the edge insulating layer is disposed between the plurality of hit lines and the interlayer insulating layer.

A semiconductor device comprising:

• a substrate including a cell area and an interface area, wherein the substrate includes active regions disposed within, the cell area;
• a gate electrode intersecting the active regions and extending in a first direction;
• a plurality of bit lines intersecting the gate electrode and extending in a second direction intersecting the first direction, wherein the plurality of bit lines includes a plurality of first bit lines and a plurality of second bit lines alternately disposed in the first direction;
• edge spacers disposed within the interface area and contacting the plurality of second bit lines;
• and
• edge insulating layers disposed between the edge spacers and contacting the plurality of first hit lines, wherein at least a portion of each of the edge insulating layers are disposed within the interface area;
• a plurality of buried contacts disposed between adjacent first bit lines of the plurality of first bit lines and adjacent second bit lines of the plurality of second bit lines;
• a plurality of landing pads disposed on the plurality of buried contacts and an insulating structure disposed between the landing pads;
• and
• a capacitor structure disposed on the plurality of landing pads and the insulating structure.