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US 11,770,636 B2Granted
Optical sensor, method of manufacturing the same, and display device including the same
AssigneeSamsung Display Co., Ltd.
InventorsJung Ha Son, Gee Bum Kim, Sang Woo Kim, Ki June Lee, Jae Ik Lim
Life of this patent
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Abstract
An optical sensor including: a substrate; a circuit element layer disposed on the substrate and including a circuit element; and a photoelectric element layer including a photoelectric element, a self-assembled monolayer, and a bias electrode connected to the photoelectric element, wherein the photoelectric element is connected to the circuit element, and wherein the self-assembled monolayer is disposed on the photoelectric element.
Claims11
An optical sensor comprising:
- a substrate;
- a circuit element layer disposed on the substrate and including a circuit element;
- and
- a photoelectric element layer including a photoelectric element, a self-assembled monolayer, and a bias electrode connected to the photoelectric element, wherein the photoelectric element is connected to the circuit element,
- wherein the self-assembled monolayer is disposed on the photoelectric element,
- wherein a protective layer is disposed between the photoelectric element and a portion of the bias electrode, and
- wherein the photoelectric element includes:
- a lower electrode connected to the circuit element;
- a P-Intrinsic-N(PIN) layer disposed on the lower electrode;
- and
- an upper electrode disposed on the PIN layer and connected to the bias electrode.
8 more elements
A display device comprising:
- a display panel including pixels;
- and
- an optical sensor disposed on the display panel and including a plurality of sensor pixels,
- wherein each of the plurality of sensor pixels includes:
- a first substrate;
- a first circuit element layer disposed on the first substrate and including a first circuit element configuring the plurality of sensor pixels;
- and
- a photoelectric element layer including a photoelectric element, a self-assembled monolayer, and a bias electrode connected to the photoelectric element, wherein the photoelectric element s connected to the first circuit element,
- wherein the bias electrode overlaps the self-assembled monolayer, and
- wherein the photoelectric element includes:
- a lower electrode connected to the first circuit element;
- a P-Intrinsic-N(PIN) layer disposed on the lower electrode;
- and
- an upper electrode disposed on the PIN layer and connected to the bias electrode.
11 more elements
Dependencies are inferred from the claim text.