Long wavelength VCSEL and integrated VCSEL systems on silicon substrates

An integrated VCSEL system comprising:

• a VCSEL comprising:
• a mesa structure disposed on a silicon substrate, the mesa structure comprising:
• a first reflector comprising a distributed Bragg reflector (DBR) mirror and a microelectromechanical system (MEMS) high contrast grating (HCG) mirror,
• a second reflector, wherein the first reflector is disposed closer to the silicon substrate than the second reflector, and
• an active region disposed between the first and second reflectors and comprising quantum well and/or dots layers;
• and
• one or more optical, electrical, or electro-optical components mounted or formed on the silicon substrate, at least one of the one or more optical, electrical, or electro-optical components in at least one of direct electrical or optical communication with the VCSEL.

An integrated VCSEL system comprising:

• a VCSEL comprising:
• a mesa structure disposed on a silicon substrate, the mesa structure comprising:
• a first reflector comprising a distributed Bragg reflector (DBR) mirror and a microelectromechanical system (MEMS) high contrast grating (HCG) mirror,
• a second reflector, wherein the first reflector is disposed closer to the silicon substrate than the second reflector, and
• an active region disposed between the first and second reflectors and comprising quantum wells;
• and
• a component mounted or formed on the silicon substrate, wherein the component comprises an optical component or an electro-optical component, and wherein the MEMS HCG mirror optically couples the VCSEL to the component.