Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element

A semiconductor light-emitting element comprising:

• an n-type semiconductor layer composed of an n-type AlGaN-based semiconductor material;
• an active layer provided on a first upper surface of the n-type semiconductor layer and composed of an AlGaN-based semiconductor material;
• a p-type semiconductor layer provided on the active layer;
• a p-side contact electrode provided in contact with the upper surface of the p-type semiconductor layer;
• a p-side current diffusion layer provided on the p-side contact electrode in a region narrower than a formation region of the p-side contact electrode, wherein the p-side current diffusion layer has a stacked structure in which a TiN layer, a metal layer, and a TiN layer are stacked in order;
• a p-side pad electrode provided on the p-side current diffusion layer;
• an n-side contact electrode provided in contact with a second upper surface of the n-type semiconductor layer;
• an n-side current diffusion layer provided on the n-side contact electrode over a region wider than a formation region of the n-side contact electrode, wherein the n-side current diffusion layer includes a first current diffusion layer provided on the n-side contact electrode and a second current diffusion layer provided on the first current diffusion layer, and wherein each of the first current diffusion layer and the second current diffusion layer has a stacked structure in which a TiN layer, a metal layer and a TiN layer are stacked in order;
• and
• an n-side pad electrode provided on the n-side current diffusion layer,
• wherein a number of the stacked structure included in the n-side current diffusion layer is larger than a number of the stacked structure included in the p-side current diffusion layer.