Light emitting device and method of making the same

A method of making a UVC light emitting device, the method comprising:

• forming a patterned layer comprising a plurality of mask regions on a substrate, wherein exposed portions of the substrate are disposed between the mask regions;
• epitaxially growing a plurality of nanostructures on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures comprising angled faces, a c-axis surface parallel to that of the substrate, and a core tip;
• epitaxially growing an active layer over the angled faces of the plurality of nanostructures, the active layer being a quantum well structure and comprising at least one material chosen from AlN, AlGaN and GaN, the active layer configured to emit UVC radiation during operating of the light emitting device;
• and
• depositing a p-doped layer over the active layer, both the active layer and the p-doped layer being conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.

A method of sanitizing a surface, the method comprising:

• contacting the surface with UVC radiation emitted from a light emitting device, the light emitting device comprising:
• a substrate;
• a patterned layer comprising a plurality of mask regions on the substrate, exposed portions of the substrate being disposed between the mask regions;
• a plurality of nanostructures disposed on the exposed portions of the substrate and over the mask regions, the plurality of nanostructures being a single crystal semiconductor and comprising angled faces, a c-axis surface parallel to that of the substrate, and a core tip;
• an active layer disposed over the angled faces of the plurality of nanostructures, the active layer being a quantum well structure and comprising at least one material chosen from AlN, AlGaN and GaN, the active layer configured to emit UVC radiation during operating of the light emitting device;
• and
• a p-doped layer disposed over the active layer, both the active layer and the p-doped layer being conformal to the plurality of nanostructures so as to form an emitter tip over the core tip.