Micro light-emitting device

A micro light-emitting device, comprising:

• a first type semiconductor layer;
• a light-emitting layer, arranged on the first type semiconductor layer;
• a second type semiconductor layer, arranged on the light-emitting layer;
• a second type heavily doped semiconductor layer arranged on the light-emitting layer;
• a first type electrode and a second type electrode, both arranged on the second type heavily doped semiconductor layer;
• and
• a light reflection layer, arranged between the light-emitting layer and the second type heavily doped semiconductor layer, wherein the light reflection layer comprises an oxidized area and a non-oxidized area, and a reflectance of the oxidized area is greater than a reflectance of the non-oxidized area, wherein
• an orthographic projection of a part of the oxidized area on the first type semiconductor layer and an orthographic projection of the first type electrode on the first type semiconductor layer at least partially overlap, and
• the second type heavily doped semiconductor layer has a larger light absorption ratio than the second type semiconductor layer.