Micro light emitting device and display apparatus having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyungwook Hwang, Junsik Hwang, Seogwoo Hong
Life of this patent
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Abstract
Provided is a micro light emitting device and a display apparatus having the micro light emitting device. The micro light emitting device includes a first-type semiconductor layer provided on a substrate, a superlattice layer provided on the first-type semiconductor layer, a current blocking layer provided on a side portion of the superlattice layer, an active layer provided on the superlattice layer and the current blocking layer, and a second-type semiconductor layer provided on the active layer.
Claims28
A micro light emitting device comprising:
- a substrate;
- a first-type semiconductor layer provided on the substrate;
- a superlattice layer provided on the first-type semiconductor layer;
- a current blocking layer provided at a side portion of the superlattice layer;
- an active layer directly provided on the superlattice layer and the current blocking layer;
- a second-type semiconductor layer provided on the active layer,
- wherein the superlattice layer has a first layer and a second layer that are alternatively stacked, and the superlattice layer has a bandgap greater than the active layer.
A display apparatus comprising:
- a driving circuit substrate;
- and
- a plurality of micro light emitting devices arranged to be electrically connected to the driving circuit substrate,
- wherein each of the plurality of micro light emitting devices comprises:
- a first-type semiconductor layer,
- a superlattice layer provided on the first-type semiconductor layer,
- a current blocking layer provided on a side portion of the superlattice layer,
- an active layer directly provided on the superlattice layer and the current blocking layer, and
- a second-type semiconductor layer provided on the active layer, and
- wherein the superlattice layer has a first layer and a second layer that are alternatively stacked, and the superlattice layer has a bandgap greater than the active layer.
A micro light emitting device comprising:
- a substrate;
- a first semiconductor layer provided on the substrate;
- a superlattice layer provided on the first semiconductor layer;
- a high resistance layer surrounding at least a portion of a peripheral region the superlattice layer;
- an active layer directly provided on the superlattice layer;
- and
- a second semiconductor layer provided on the active layer,
- wherein the high resistance layer has a higher resistance than the superlattice layer, and
- wherein the superlattice layer has a first layer and a second layer that are alternatively stacked, and the superlattice layer has a bandgap greater than the active layer.
A micro light emitting device comprising:
- a substrate;
- a first semiconductor layer provided on the substrate;
- a superlattice layer provided on a first portion of a first surface of the first semiconductor a high resistance layer provided on a second portion of the first surface of the first semiconductor layer;
- an active layer directly provided on the superlattice layer;
- and
- a second semiconductor layer provided on the active layer,
- wherein the high resistance layer has a higher resistance than the superlattice layer, and
- wherein the superlattice layer has a first layer and a second layer that are alternatively stacked, and the superlattice layer has a bandgap greater than the active layer.
Dependencies are inferred from the claim text.