Solid state lighting devices with dielectric insulation and methods of manufacturing
AssigneeMicron Technology, Inc.
InventorScott D. Schellhammer
Life of this patent
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Abstract
Semiconductor lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The semiconductor lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.
Claims14
A semiconductor lighting device, comprising:
- a first semiconductor material;
- a second semiconductor material;
- an active region disposed between the first and second semiconductor materials;
- a V-shaped indentation defined by sidewalls and extending at least partially through the active region and the first semiconductor material;
- a conductive material over and in contact with the second semiconductor material;
- and
- an insulating material in the indentation and electrically insulating (1) at least a portion of the first semiconductor material from the second semiconductor material and/or (2) the conductive material from at least one of the active region and the first semiconductor material.
A solid state lighting device, comprising:
- a first semiconductor;
- a second semiconductor;
- an active region disposed between the first and second semiconductors;
- a V-shaped indentation defined by sidewalls and extending at least partially through the active region and the first semiconductor;
- a conductive material over and in contact with the second semiconductor;
- and
- an insulating material in the indentation and electrically insulating (1) at least a portion of the first semiconductor from the second semiconductor and/or (2) the conductive material from at least one of the active region and the first semiconductor.
Dependencies are inferred from the claim text.