Optoelectronic integrated substrate, preparation method thereof, and optoelectronic integrated circuit

An optoelectronic integrated circuit, comprising an optoelectronic integrated substrate comprising:

• a base substrate, and an electronic device and a photo-diode disposed on the base substrate, wherein the photo-diode comprises an ohmic contact layer and an intrinsic amorphous silicon layer, and the ohmic contact layer and the intrinsic amorphous silicon layer are sequentially arranged along a direction parallel to a plane of the base substrate and are connected;
• wherein the photo-diode further comprises a first electrode, a second electrode and a composite insulating layer, and the composite insulating layer is provided with a first opening exposing the ohmic contact layer;
• wherein the first electrode is disposed on a side wall of the first opening close to the electronic device and connected to the ohmic contact layer, and the second electrode is disposed on a side wall of the first opening away from the electronic device;
• the intrinsic amorphous silicon layer is disposed in the first opening and comprises a first side close to the electronic device and a second side away from the electronic device;
• the first side of the intrinsic amorphous silicon layer is connected to the ohmic contact layer, and the second side of the intrinsic amorphous silicon layer is connected to the second electrode;
• or,
• wherein the first electrode is disposed on a side wall of the first opening close to the electronic device, and the second electrode is disposed on a side wall of the first opening away from the electronic device and connected to the ohmic contact layer;
• the intrinsic amorphous silicon layer is disposed in the first opening and comprises a first side close to the electronic device and a second side away from the electronic device;
• the first side of the intrinsic amorphous silicon layer is connected to the first electrode, and the second side of the intrinsic amorphous silicon layer is connected to the ohmic contact layer.

A preparation method of an optoelectronic integrated substrate, comprising:

• forming an electronic device and a photo-diode on a base substrate;
• wherein the photo-diode comprises an ohmic contact layer and an intrinsic amorphous silicon layer, and the ohmic contact layer and the intrinsic amorphous silicon layer are sequentially arranged along a direction parallel to a plane of the base substrate and are connected;
• wherein forming the photo-diode on the base substrate comprises:
• forming the ohmic contact layer on the base substrate;
• forming a composite insulating layer, wherein the composite insulating layer is provided with a first opening exposing the ohmic contact layer;
• and
• forming a first electrode and a second electrode, wherein the first electrode is disposed on a side wall of the first opening close to the electronic device and connected to the ohmic contact layer, and the second electrode is disposed on a side wall of the first opening away from the electronic device;
• forming the intrinsic amorphous silicon layer in the first opening, wherein the intrinsic amorphous silicon layer comprises a first side close to the electronic device and a second side away from the electronic device in a plane parallel to the base substrate;
• the first side of the intrinsic amorphous silicon layer is connected to the ohmic contact layer, and the second side of the intrinsic amorphous silicon layer is connected to the second electrode;
• or,
• forming a first electrode and a second electrode, wherein the first electrode is disposed on a side wall of the first opening close to the electronic device, and the second electrode is disposed on a side wall of the first opening away from the electronic device and connected to the ohmic contact layer;
• forming the intrinsic amorphous silicon layer in the first opening, wherein the intrinsic amorphous silicon layer comprises a first side close to the electronic device and a second side away from the electronic device in a plane parallel to the base substrate;
• the first side of the intrinsic amorphous silicon layer is connected to the first electrode, and the second side of the intrinsic amorphous silicon layer is connected to the ohmic contact layer.