Heterojunction structure-based solar cell and manufacturing method thereof
AssigneeResearch & Business Foundation Sungkyunkwan University
InventorJaehyeong Lee
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Abstract
A method for manufacturing a heterojunction structure based solar cell includes preparing an n-type or p-type semiconductor substrate; forming a p-type or n-type non-oxide semiconductor material layer on the n-type or p-type semiconductor substrate to form a p-n junction; forming a transition metal oxide film on the non-oxide semiconductor material layer; and forming a front electrode and a rear electrode. The transition metal oxide layer protects the surface of the non-oxide semiconductor and improves charge extraction.
Claims6
A method for manufacturing a heterojunction structure based solar cell, the method comprising:
- preparing an n-type semiconductor substrate;
- texturing at least one of a front surface or a rear surface of the n-type semiconductor substrate;
- forming a p-type non-oxide semiconductor material layer of CuI on the n-type semiconductor substrate to form a p-n junction;
- forming a transition metal oxide film directly on the p-type non-oxide semiconductor material layer of CuI;
- and
- forming a front electrode and a rear electrode,
- wherein the transition metal oxide layer protects the p-type non-oxide semiconductor material layer of CuI,
- wherein the transition metal oxide film is formed using one of thermal evaporation, e-beam evaporation, and atomic layer deposition, and
- wherein a thickness of the transition metal oxide film is smaller than 10 nm.
Dependencies are inferred from the claim text.