Back to results
US 11,769,840 B2Granted
Oxide semiconductor substrate and schottky barrier diode
AssigneeIdemitsu Kosan Co., Ltd.
InventorsShigekazu Tomai, Masatoshi Shibata, Emi Kawashima, Koki Yano, Hiromi Hayasaka
Life of this patent
Estimating the term…
Abstract
A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
Claims16
A structural body comprising a substrate, a first metal thin film, an oxide semiconductor layer, and a second metal thin film,
- wherein the substrate, the first metal thin film, the oxide semiconductor layer, and the second metal thin film are stacked in this order, or
- the substrate, the second metal thin film, the oxide semiconductor layer, and the first metal thin film are stacked in this order,
- wherein the oxide semiconductor layer consists of polycrystalline and/or amorphous oxide semiconductor which comprises indium (In) as a main component, each of the first metal thin film and the second metal thin film is in direct contact with the oxide semiconductor layer and a thickness of the oxide semiconductor layer is from 50 nm to 20 μm, wherein the first metal thin film is a schottky electrode layer and the second metal thin film is an ohmic electrode layer, wherein the schottky electrode layer comprises Ru, Au, Pd, Ni, Ir, Pt or alloys thereof.
Dependencies are inferred from the claim text.