Stacked III-V semiconductor diode

A stacked III-V semiconductor diode comprising or consisting of GaAs, and comprising:

• a highly n-doped cathode layer;
• a highly p-doped anode layer;
• and
• a drift region arranged between the cathode layer and the anode layer, the drift region having a low n-doped drift layer and a low p-doped drift layer,
• wherein the n-doped drift layer is arranged between the p-doped drift layer and the cathode layer,
• wherein both drift layers each have a layer thickness of at least 5 μm and, along the respective layer thickness, a dopant concentration maximum of not more than 8·1015 cm−3,
• wherein the dopant concentration maxima of the two drift layers to each other have a ratio of 0.1 to 10,
• wherein a ratio of the layer thickness of the n-doped drift layer to the layer thickness of the p-doped drift layer is between 0.5 to 3, and
• wherein the anode layer and/or the cathode layer has a first section with a constant dopant concentration curve and a second section arranged between the first section and the drift region with a dopant concentration curve ascending in a step-like manner in the direction of the first section.