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US 11,769,838 B2Granted
Semiconductor device with change storage layer
AssigneeKioxia Corporation
InventorsMasaki Noguchi, Akira Takashima, Tatsunori Isogai
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Abstract
A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.
Claims15
A semiconductor device comprising:
- a semiconductor layer;
- a first insulating film disposed on the semiconductor layer;
- a charge storage layer disposed on the first insulating film;
- a second insulating film disposed on the charge storage layer;
- and
- an electrode layer disposed on the second insulating film,
- wherein the charge storage layer includes a first layer containing silicon and nitrogen, a second layer containing metal and nitrogen, and a third layer containing silicon and nitrogen, the second layer being provided between the first layer and the third layer.
4 more elements
A semiconductor device comprising:
- a substrate:
- a stacked body provided above the substrate and including a plurality of first electrode layers and a plurality of first insulating layers alternately stacked in a first direction crossing a surface of the substrate;
- a semiconductor layer extending through the stacked body in the first direction;
- and
- a charge storage layer provided between the semiconductor layer and the stacked body, wherein the charge storage layer includes a first layer containing silicon nitride, a second layer containing aluminum nitride and a third layer containing silicon nitride, the second layer being provided between the first layer and the third layer.
2 more elements
Dependencies are inferred from the claim text.