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US 11,769,834 B2Granted
Thin film transistor and display substrate having the same
AssigneeSamsung Display Co., Ltd.
InventorsJong Yun Kim, Taekyung Ahn, Youngdae Kim
Life of this patent
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Abstract
A display substrate including a base substrate, a first thin film transistor disposed on the base substrate and including a first gate electrode and a first semiconductor active layer; a second thin film transistor electrically connected to the first thin film transistor, the second thin film transistor including a second gate electrode and a second semiconductor active layer; and an organic light emitting device electrically connected to the second thin film transistor. The first semiconductor active layer includes a first material and the second semiconductor active layer includes a second material different from the first material.
Claims16
A display substrate, comprising:
- a base substrate;
- a first buffer layer disposed on the base substrate;
- a first semiconductor active layer disposed on the first buffer layer;
- a gate insulating layer disposed on the first semiconductor active layer;
- a first gate electrode disposed on the gate insulating layer to correspond to the first semiconductor active layer;
- a second gate electrode disposed on the gate insulating layer;
- a first inter-insulating layer disposed on the gate insulating layer to cover the first gate electrode and the second gate electrode;
- a second semiconductor active layer disposed on the first inter-insulating layer to correspond to the second gate electrode;
- a second inter-insulating layer covering the second semiconductor active layer;
- first and second electrodes disposed on the second inter-insulating layer and making contact with the first semiconductor active layer;
- third and fourth electrodes disposed on the second inter-insulating layer and making contact with the second semiconductor active layer;
- and
- a capacitor comprising a first capacitor electrode and a second capacitor electrode,
- wherein:
- the first semiconductor active layer comprises a first material and the second semiconductor active layer comprises a second material different from the first material;
- the first capacitor electrode is disposed on the gate insulating layer and under the second inter-insulating layer;
- second capacitor electrode is disposed on the second inter-insulating layer;
- at least one of the first to fourth electrodes comprises:
- a first conductive layer;
- and
- a second conductive layer disposed on the first conductive layer and electrically connected to the first conductive layer;
- the second capacitor electrode is integrally formed and continuous with the third electrode;
- and
- the second capacitor electrode consists of the first conductive layer or the second conductive layer.
21 more elements
A display substrate, comprising:
- a base substrate;
- a first buffer layer disposed on the base substrate;
- a first semiconductor active layer disposed on the first buffer layer;
- a gate insulating layer disposed on the first semiconductor active layer;
- a first gate electrode disposed on the gate insulating layer to correspond to the first semiconductor active layer;
- a second gate electrode disposed on the gate insulating layer;
- a first inter-insulating layer disposed on the gate insulating layer to cover the first gate electrode and the second gate electrode;
- a second semiconductor active layer disposed on the first inter-insulating layer to correspond to the second gate electrode a second inter-insulating layer covering the second semiconductor active layer;
- first and second electrodes disposed on the second inter-insulating layer and making contact with the first semiconductor active layer;
- third and fourth electrodes disposed on the second inter-insulating layer and making contact with the second semiconductor active layer;
- and
- a capacitor comprising a first capacitor electrode and a second capacitor electrode,
- wherein:
- the first semiconductor active layer comprises an oxide semiconductor, and the second semiconductor active layer comprises a material different from the oxide semiconductor;
- the first capacitor electrode is formed on the gate insulating layer and under the second inter-insulating layer;
- the second capacitor electrode is disposed on the second inter-insulating layer;
- at least one of the first to fourth electrodes comprises:
- a first conductive layer;
- and
- a second conductive layer disposed on the first conductive layer and electrically connected to the first conductive layer;
- the second capacitor electrode is integrally formed and continuous with the third electrode;
- and
- the second capacitor electrode consists of the first conductive layer or the second conductive layer.
20 more elements
Dependencies are inferred from the claim text.