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US 11,769,833 B2Granted
Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChi-Hsuan Tang, Chung-Ting Huang, Bo-Shiun Chen, Chun-Jen Chen, Yu-Shu Lin
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Abstract
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an epitaxial layer adjacent to the gate structure, and then forming a first cap layer on the epitaxial layer. Preferably, a top surface of the first cap layer includes a curve concave upward and a bottom surface of the first cap layer includes a planar surface higher than a top surface of the substrate.
Claims9
A method for fabricating a semiconductor device, comprising:
- forming a gate structure on a substrate;
- forming an epitaxial layer adjacent to the gate structure;
- and
- forming a first cap layer on the epitaxial layer, wherein the first cap layer is made of silicon, a top surface of the first cap layer comprises a curve concave upward, and a bottom surface of the first cap layer comprises a planar surface higher than a top surface of the substrate.
1 more element
Dependencies are inferred from the claim text.