Semiconductor device

A semiconductor device that is a facedown mountable, chip-size-package type semiconductor device, the semiconductor device comprising:

• a semiconductor layer;
• a vertical field-effect transistor provided in a first region in the semiconductor layer;
• and
• a drain lead-out region provided in a second region adjacent to the first region in the semiconductor layer in a plan view of the semiconductor layer,
• wherein the semiconductor layer is in a rectangular shape in the plan view,
• when, in the plan view, out of longer sides of the semiconductor layer, a longer side included in the first region and a longer side included in the second region are referred to as one longer side and an other longer side, respectively, and out of shorter sides of the semiconductor layer, a shorter side defining a first vertex with the one longer side is referred to as one shorter side, and a shorter side opposite to the one shorter side is referred to as an other shorter side, a border line between the first region and the second region is a straight line parallel to the longer sides of the semiconductor layer in the plan view,
• the first region includes a plurality of source pads and one or more gate pads on a surface of the semiconductor layer,
• the second region includes a plurality of drain pads on the surface of the semiconductor layer,
• at least one gate pad among the one or more gate pads is disposed to dispose none of the plurality of source pads between (i) the at least one gate pad and (ii) the one longer side and the one shorter side in the plan view,
• at least one drain pad among the plurality of drain pads is in a same shape as the at least one gate pad in the plan view, and is disposed close to a second vertex of the semiconductor layer in the plan view, the second vertex being diagonally opposite to the first vertex,
• the plurality of source pads include a plurality of source pads that are, in the plan view, in a rectangular shape or an obround shape having a longitudinal direction parallel to the longer sides of the semiconductor layer,
• the plurality of drain pads include a drain pad that is, in the plan view, in a rectangular shape or an obround shape having a longitudinal direction parallel to the longer sides of the semiconductor layer,
• the plurality of source pads in the rectangular shape or the obround shape are disposed in stripes at regular intervals in the plan view, and
• in the plan view, spaces between the plurality of source pads in the rectangular shape or the obround shape are equal to a space between a source pad and the drain pad in the rectangular shape or the obround shape that are opposite to each other across the border line, the source pad being included in the plurality of source pads in the rectangular shape or the obround shape.