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US 11,769,825 B2Granted
Nitride semiconductor device and nitride semiconductor package
AssigneeRohm Co., Ltd.
InventorTaketoshi Tanaka
Life of this patent
Estimating the term…
Abstract
Provided is a nitride semiconductor device 3 including a GaN electron transit layer 13, an AlGaN electron supply layer 14 in contact with the electron transit layer 13, a gate layer 15, formed selectively on the electron supply layer 14 and constituted of a nitride semiconductor composition effectively not containing an acceptor type impurity, and a gate electrode 16, formed on the gate layer 15, and satisfying the following formula (1): d g 2 E F q ( N DA + N A - N DD - N D ) ε 0 ε C + Φ B - d B P ε 0 ε C > 0. ( 1 )
Claims19
A nitride semiconductor device comprising:
- a first nitride semiconductor layer, constituting the electron traveling layer;
- a second nitride semiconductor layer, formed on the first nitride semiconductor layer and constituting the electron supply layer;
- a gate portion, disposed on the second nitride semiconductor layer;
- a passivation film, formed to cover the gate portion;
- a barrier metal film, formed to cover the passivation film;
- and
- a source electrode and a drain electrode, connected to the second nitride semiconductor layer and disposed on the barrier metal film,
- wherein a connection portion of the source electrode to the second nitride semiconductor layer and a connection portion of the drain electrode to the second nitride semiconductor layer are disposed to sandwich the gate portion in a plan view,
- wherein the source electrode and the drain electrode are composed of a lower layer in contact with the second nitride semiconductor layer, an intermediate layer laminated on the lower layer, and an upper layer laminated on the intermediate layer,
- wherein the lower layer has a thickness of 10 nm to 20 nm,
- wherein the intermediate layer has a thickness of 100 nm to 300 nm, and
- wherein the upper layer has a thickness of 10 nm to 50 nm.
9 more elements
A nitride semiconductor device comprising:
- a first nitride semiconductor layer, constituting the electron traveling layer;
- a second nitride semiconductor layer, formed on the first nitride semiconductor layer and constituting the electron supply layer;
- a gate portion, disposed on the second nitride semiconductor layer;
- a passivation film, formed to cover the gate portion;
- a barrier metal film, formed to cover the passivation film;
- and
- a source electrode and a drain electrode, connected to the second nitride semiconductor layer and disposed on the barrier metal film,
- wherein a connection portion of the source electrode to the second nitride semiconductor layer and a connection portion of the drain electrode to the second nitride semiconductor layer are disposed to sandwich the gate portion in a plan view,
- wherein the gate portion includes:
- a nitride semiconductor gate layer formed on the second nitride semiconductor layer;
- a gate insulating film formed on the nitride semiconductor gate layer;
- and
- a gate electrode formed on the gate insulating film.
10 more elements
Dependencies are inferred from the claim text.