Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Hao Chang, Li-Te Lin
Life of this patent
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Abstract
A semiconductor device includes a substrate, a semiconductor fin, gate spacers, a gate structure. The semiconductor fin is on the substrate. The gate spacers are over the semiconductor fin. The gate structure is on the semiconductor fin and between the gate spacers. The gate structure includes a gate dielectric layer and a first work function metal over the gate dielectric layer, in which a top surface of the first work function metal is lower than a top surface of the gate dielectric layer, and a distance between the top surface of the first work function metal and the top surface of the gate dielectric layer is less than about 1 nm.
Claims20
A semiconductor device, comprising:
- a substrate;
- a semiconductor fin on the substrate;
- a plurality of gate spacers over the semiconductor fin;
- and
- a gate structure on the semiconductor fin and between the gate spacers, wherein the gate structure comprises:
- a gate dielectric layer;
- and
- a first work function metal over the gate dielectric layer, wherein a top surface of the first work function metal is lower than a top surface of the gate dielectric layer, and a distance between the top surface of the first work function metal and the top surface of the gate dielectric layer is less than about 1 nm.
A semiconductor device, comprising:
- a semiconductive channel pattern;
- a gate pattern extending across the semiconductive channel pattern from a top view, and comprising a metal structure and a high-k dielectric layer cupping an underside of the metal structure from a cross-sectional view;
- a bromine-containing polymer extending along a top surface of the metal structure and terminating prior to covering a top surface of the high-k dielectric layer;
- and
- source and drain patterns on opposite sides of the gate pattern from the top view.
A semiconductor device, comprising:
- a nanostructured pedestal on a substrate, the nanostructured pedestal having a top surface and opposite side surfaces;
- a dielectric layer wrapping around the top surface and the opposite side surfaces of the nanostructured pedestal;
- a first metal over the dielectric layer;
- a second metal over the first metal, the first metal having a top surface extending in a steeper slope than a top surface of the second metal;
- and
- doped epitaxial structures on the nanostructured pedestal and sandwiching the dielectric layer, the first metal and the second metal.
Dependencies are inferred from the claim text.