Semiconductor device having a corner spacer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Ping Chen, Kuei-Yu Kao, Shih-Yao Lin, Chih-Han Lin, Ming-Ching Chang, Chao-Cheng Chen
Life of this patent
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Abstract
A device includes a fin protruding from a semiconductor substrate; a gate stack over and along a sidewall of the fin; a gate spacer along a sidewall of the gate stack and along the sidewall of the fin; an epitaxial source/drain region in the fin and adjacent the gate spacer; and a corner spacer between the gate stack and the gate spacer, wherein the corner spacer extends along the sidewall of the fin, wherein a first region between the gate stack and the sidewall of the fin is free of the corner spacer, wherein a second region between the gate stack and the gate spacer is free of the corner spacer.
Claims20
A device comprising:
- a fin protruding from a semiconductor substrate;
- a gate stack over and along a sidewall of the fin;
- a gate spacer along a sidewall of the gate stack and along the sidewall of the fin;
- an epitaxial source/drain region in the fin and adjacent the gate spacer;
- and
- a corner spacer between the gate stack and the gate spacer, wherein the corner spacer extends along the sidewall of the fin, wherein the sidewall of the fin is free of the corner spacer, wherein a first region between the gate stack and the sidewall of the fin is free of the corner spacer, wherein a second region between the gate stack and the gate spacer is free of physical contact with the corner spacer, wherein the first region and the second region are laterally adjacent the corner spacer.
A device, comprising:
- a fin over a substrate;
- a gate structure on an upper surface and opposing sidewalls of the fin;
- gate spacers along opposing sidewalls of the gate structure, wherein first portions of the gate spacers have a first width, wherein second portions of the gate spacers have a second width that is greater than the first width, wherein the first portions are closer to the fin than the second portions, wherein the first width and the second width are measured in a first direction parallel to a sidewall of the fin;
- a dummy dielectric material on the fin, wherein the dummy dielectric material extends between the fin and the gate spacers;
- and
- corner spacers, wherein each of the corner spacers is interposed between the gate structure and a corresponding one of the first portions of the gate spacers.
A device comprising:
- a fin protruding from a substrate;
- a gate structure extending over a channel region of the fin and over a sidewall of the fin;
- a first spacer material extending over a sidewall of the gate structure and over the sidewall of the fin;
- a second spacer material adjacent the sidewall of the fin, wherein the second spacer material is at least partially encircled by the sidewall of the fin, the sidewall of the gate structure, and a sidewall of the first spacer material, collectively;
- a dielectric material on the sidewall of the fin, wherein the dielectric material separates the sidewall of the fin from the first spacer material and the second spacer material;
- and
- an epitaxial region on the fin and adjacent the channel region of the fin, wherein the epitaxial region extends farther from the sidewall of the fin than the second spacer material.
Dependencies are inferred from the claim text.