Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
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Abstract
Methods and devices formed thereof that include a fin structure extending from a substrate and a gate structure is formed over the fin structure. An epitaxial feature is formed over the fin structure adjacent the gate structure. The epitaxial feature can include a hollow region (or dielectric filled hollow region) in the epitaxial source/drain region. A selective etching process is performed to remove at least a portion of an epitaxial region having a second dopant type to form the hollow area between the first epitaxial portion and the third epitaxial portion.
Claims20
A method of semiconductor device fabrication, comprising:
- providing a fin structure extending from a substrate;
- forming a gate structure over the fin structure;
- forming an epitaxial feature over the fin structure adjacent the gate structure, wherein the forming the epitaxial feature includes:
- growing a first epitaxial portion;
- forming a second epitaxial portion over the first epitaxial portion, wherein forming the second epitaxial portion includes introducing a first dopant material;
- growing a third epitaxial portion over the second epitaxial portion, wherein the growing the third epitaxial portion includes introducing a second dopant material;
- and
- performing a selective etching process to remove at least a portion of the second epitaxial portion to form a hollow area between the first epitaxial portion and the third epitaxial portion.
A method of semiconductor device fabrication, comprising:
- providing a first fin structure extending from a substrate;
- forming a gate structure over the first fin structure;
- providing a seed area on a surface of the first fin structure;
- growing an epitaxial feature on the seed area, wherein the growing the epitaxial feature includes introducing arsenic for a first portion of the epitaxial feature and introducing phosphorous for a second portion of the epitaxial feature;
- and
- removing the first portion of the epitaxial feature to form a hollow area within the epitaxial feature.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate including a fin element extending from the substrate;
- forming a gate structure over the fin element;
- and
- epitaxially growing a source/drain feature adjacent the gate structure and over the fin element, wherein the growing includes:
- forming the source/drain feature having a lower semiconductor portion and an upper semiconductor portion, wherein the forming the source/drain feature includes forming the upper semiconductor portion including silicon and phosphorous;
- and
- forming a dielectric region interposing the lower semiconductor portion and the upper semiconductor portion, wherein the forming the dielectric region includes an etching process forming a hollow area.
Dependencies are inferred from the claim text.