Semiconductor device structure with metal gate stack
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsXusheng Wu, Chang-Miao Liu, Huiling Shang
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a metal gate stack over the semiconductor substrate. The semiconductor device structure also includes a spacer element over a sidewall of the metal gate stack. The spacer element is doped with a dopant, and the dopant reduces a dielectric constant of the spacer element. An atomic concentration of the dopant decreases along a direction from an inner surface of the spacer element adjacent to the metal gate stack towards an outer surface of the spacer element.
Claims20
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a metal gate stack over the semiconductor substrate;
- and
- a spacer element over a sidewall of the metal gate stack, wherein the spacer element is doped with a dopant, the dopant reduces a dielectric constant of the spacer element, and an atomic concentration of the dopant decreases along a direction from an inner surface of the spacer element adjacent to the metal gate stack towards an outer surface of the spacer element.
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a metal gate stack over the semiconductor substrate;
- and
- a spacer element over a sidewall of the metal gate stack, wherein the spacer element has a lower portion and an upper portion, the lower portion is thicker than the upper portion, the upper portion has an upper sidewall, the lower portion has a lower sidewall, the upper sidewall and the lower sidewall are substantially vertical, the spacer is doped with a dopant, the dopant reduces a dielectric constant of the spacer element, the lower portion has a first atomic concentration of the dopant, the upper portion has a second atomic concentration of the dopant, and the first atomic concentration of the dopant is greater than the second atomic concentration of the dopant.
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a metal gate stack over the semiconductor substrate;
- and
- a spacer element over a sidewall of the metal gate stack, wherein the spacer element is doped with a dopant, the dopant reduces a dielectric constant of the spacer element, the spacer element has a lower part and an upper part, the upper part has a first atomic concentration of the dopant, the lower part has a second atomic concentration of the dopant, and the first atomic concentration of the dopant is greater than the second atomic concentration of the dopant.
Dependencies are inferred from the claim text.