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US 11,769,817 B2Granted
Method for forming source/drain contacts
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShahaji B. More, Chun Hsiung Tsai, Shih-Chieh Chang, Kuo-Feng Yu, Cheng-Yi Peng
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Abstract
A semiconductor structure includes a substrate, a semiconductor fin connected to the substrate, an epitaxial layer disposed over the semiconductor fin, and a silicide feature over and in contact with the epitaxial layer. The epitaxial layer including silicon germanium and further includes gallium in an upper portion of the epitaxial layer that is in contact with the silicide feature.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a semiconductor fin connected to the substrate;
- an epitaxial layer disposed over the semiconductor fin;
- and
- a silicide feature over and in contact with the epitaxial layer, wherein the epitaxial layer includes silicon germanium and further includes gallium in an upper portion of the epitaxial layer that is in contact with the silicide feature.
2 more elements
A semiconductor structure, comprising:
- a substrate;
- a semiconductor fin extending from the substrate;
- an epitaxial layer disposed over the semiconductor fin, wherein the epitaxial layer includes silicon germanium;
- a silicide feature over the epitaxial layer, wherein the silicide feature includes titanium silicide;
- and
- a first layer between the epitaxial layer and the silicide feature, wherein the first layer includes gallium.
3 more elements
A semiconductor structure, comprising:
- a substrate;
- a semiconductor fin extending from the substrate;
- an epitaxial layer grown on the semiconductor fin, wherein the epitaxial layer includes silicon germanium and boron;
- a first layer over the epitaxial layer, wherein the first layer includes silicon germanium and gallium;
- and
- a silicide feature over the first layer, wherein the silicide feature is substantially free of boron.
3 more elements
Dependencies are inferred from the claim text.