Device including air gapping of gate spacers and other dielectrics and process for providing such
AssigneeIntel Corporation
InventorsEhren Mannebach, Aaron Lilak, Hui Jae Yoo, Patrick Morrow, Kevin L. Lin, Tristan Tronic
Life of this patent
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Abstract
A device is disclosed. The device includes a gate conductor, a first source-drain region and a second source-drain region. The device includes a first air gap space between the first source-drain region and a first side of the gate conductor and a second air gap space between the second source-drain region and a second side of the gate conductor. A hard mask layer that includes holes is under the gate conductor, the first source-drain region, the second source-drain region and the air gap spaces. A planar dielectric layer is under the hard mask.
Claims9
A device, comprising:
- a gate conductor;
- a first source-drain region and a second source-drain region adjacent to the gate conductor;
- a first air gap space between the first source-drain region and a first side of the gate conductor and a second air gap space between the second source-drain region and a second side of the gate conductor, wherein the first air gap space and the second air gap space are in contact with the gate conductor;
- a hard mask layer that includes holes under the gate conductor, the first source-drain region, the second source-drain region and the air gap spaces;
- and
- a planar dielectric layer under the hard mask layer.
A device, comprising:
- a gate conductor;
- a first source-drain region and a second source-drain region adjacent to the gate conductor;
- a first air gap space between the first source-drain region and a first side of the gate conductor and a second air gap space between the second source-drain region and a second side of the gate conductor;
- a hard mask layer that includes holes under the gate conductor, the first source-drain region, the second source-drain region and the air gap spaces;
- and
- a planar dielectric layer under the hard mask layer, wherein the first air gap space and the second air gap space extend from a surface level of the hard mask layer to the surface level of the first source-drain region and the surface level of the second source-drain region.
Dependencies are inferred from the claim text.