Lateral transistor with extended source finger contact
AssigneeSemiconductor Components Industries, LLC
InventorWoochul Jeon
Life of this patent
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Abstract
Semiconductor devices, such as a lateral HEMT, may display current flow between a plurality of interdigitated source fingers and drain fingers, and controlled by a common gate connection. An extended source finger contact may enable improved voltage control across the source fingers, even for large devices with many and/or lengthy source fingers. In this way, unwanted subthreshold operations and switching oscillations may be avoided by reliably maintaining a source voltage at a desired level, to thereby provide fast and reliable switching.
Claims20
A semiconductor device, comprising:
- a plurality of source fingers in a first plane;
- a source pad in a second plane and connected to the plurality of source fingers;
- a plurality of drain fingers in the first plane and interdigitated with the plurality of source fingers;
- a drain pad in the second plane and connected to the plurality of drain fingers;
- a gate pad connected to a gate and to a gate feed that extends at least partially around the source pad and the drain pad;
- and
- an extended source finger contact in the second plane and connected to the source pad and to a source finger of the plurality of source fingers, and extending in parallel with the source finger and at least partially around the drain pad.
A semiconductor device, comprising:
- a plurality of drain fingers in a first plane;
- a drain pad in a second plane and connected to the plurality of drain fingers;
- a plurality of source fingers in the first plane that are parallel to, and interdigitated with, the plurality of drain fingers;
- a source pad in the second plane and connected to the plurality of source fingers;
- a gate pad connected to a gate feed that extends around at least a portion of the source pad or the drain pad;
- and
- an extended source finger contact in the second plane and connected to the source pad and extending in a direction of the drain pad, at least partially around the drain pad, and at least partially within the gate feed.
A method of making a semiconductor device, comprising:
- connecting a plurality of source fingers in a first plane to a source pad in a second plane;
- connecting a drain pad in the second plane to a plurality of drain fingers that are interdigitated with the plurality of source fingers within the first plane;
- connecting a gate pad to a gate and to a gate feed that extends at least partially around the source pad and the drain pad;
- and
- connecting an extended source finger contact in the second plane to the source pad and to a source finger of the plurality of source fingers, wherein the extended source finger contact extends in parallel with the source finger and at least partially around the drain pad.
Dependencies are inferred from the claim text.