Bipolar junction transistors including wrap-around emitter and collector contacts
AssigneeGlobalFoundries U.S. Inc.
InventorsHong Yu, Jagar Singh
Life of this patent
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Abstract
Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer having a top surface and a side surface, a second terminal having a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The structure further includes a contact positioned to overlap with the top surface and the side surface of the first raised semiconductor layer.
Claims20
A structure for a lateral bipolar junction transistor, the structure comprising:
- a first terminal including a first raised semiconductor layer that has a top surface and a side surface;
- a second terminal including a second raised semiconductor layer;
- a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal;
- and
- a first contact positioned to overlap with the top surface and the side surface of the first raised semiconductor layer.
A method of forming a structure for a lateral bipolar junction transistor, the method comprising:
- forming a first terminal including a first raised semiconductor layer that has a top surface and a side surface;
- forming a second terminal including a second raised semiconductor layer;
- forming a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal;
- and
- forming a first contact positioned to overlap with the top surface and the side surface of the first raised semiconductor layer.
Dependencies are inferred from the claim text.