Semiconductor device including fin and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorSungmin Kim
Life of this patent
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Abstract
A semiconductor device includes a substrate; and a fin protruding from the substrate. The fin includes a first material and a second material. The fin includes a lower section, a middle section, and an upper section. The middle section has a smaller width at a middle portion than a width at lower and upper portions of the middle section. A concentration of the second material gradually decreases from the middle portion in upward and downward directions.
Claims20
A method for manufacturing a semiconductor device comprising:
- forming a fin structure including a lower pattern, a middle pattern, and an upper pattern on a substrate, the middle pattern including a first material and the upper pattern including a second material;
- performing an annealing process on the fin structure, the annealing process including forming a fin including a recessed side surface while forming a concentration gradient of the first material in the fin,
- forming a liner pattern covering a portion of a side surface of the fin;
- and
- crystallizing the liner pattern through an annealing operation to expand an upper region of the fin,
- wherein a concentration of the first material gradually decreases from a middle portion of the recessed side surface in upward and downward directions.
A method for manufacturing a semiconductor device, comprising:
- sequentially forming a first material layer and a second material layer on a substrate;
- forming a fin structure on the substrate, the fin structure including a lower pattern, a middle pattern, and an upper pattern;
- forming an isolation layer to cover side surfaces of the fin structure;
- and
- performing an annealing process on the fin structure, the annealing process including forming a fin including a recessed side surface while forming a concentration gradient of a first material in the fin,
- wherein a concentration of the first material gradually decreases from a middle portion of the recessed side surface in upward and downward directions.
A method for manufacturing a semiconductor device, comprising:
- sequentially forming a first material layer and a second material layer on a substrate;
- forming a fin structure on the substrate, the fin structure including a lower pattern, a middle pattern, and an upper pattern;
- forming an isolation layer to cover side surfaces of the fin structure;
- and
- performing an annealing process on the fin structure, the annealing process including forming a fin including a recessed side surface while forming a concentration gradient of a first material in the fin;
- and
- forming a notch at a side surface of the fin, wherein
- a concentration of the first material gradually decreases from a middle portion of the recessed side surface in upward and downward directions.
Dependencies are inferred from the claim text.