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US 11,769,796 B2Granted
Hybrid complementary metal-oxide semiconductor field effect transistor nanosheet device
AssigneeInternational Business Machines Corporation
InventorsChen Zhang, Ruilong Xie, Tenko Yamashita
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Abstract
A semiconductor device formed by forming a stack of alternating horizontal nanosheet layers, recessing the stack for an n-type field effect transistor (nFET), growing crystalline semiconductor adjacent to the stack, forming vertical nanosheets from the crystalline semiconductor, forming inner spacers between the vertical nanosheets, and forming a high-k metal gate structure around the horizontal nanosheets and the vertical nanosheets.
Claims14
A semiconductor structure comprising:
- a first field effect transistor (FET), the first FET comprising a first plurality of semiconductor channel nanosheets having a horizontal orientation and a first separation pitch between the first plurality of semiconductor channel nanosheets;
- a second FET disposed adjacent to the first FET, the second FET comprising a second plurality of semiconductor channel nanosheets having a vertical orientation and a second separation pitch between the second plurality of semiconductor channel nanosheets, with first inner dielectric spacers disposed between the second plurality of nanosheets wherein each such first inner dielectric spacer is disposed in contact with two otherwise adjacent vertical nanosheets;
- and
- wherein the first separation pitch is similar to the second separation pitch.
1 more element
A semiconductor structure comprising:
- an n-type field effect transistor (nFET), the nFET comprising a plurality of horizontal semiconductor channel nanosheets disposed at a first pitch separating the plurality of semiconductor channel nanosheets;
- and
- a p-type FET (pFET), the pFET comprising a plurality of vertical semiconductor channel nanosheets
- disposed at the first pitch and having first inner dielectric spacers disposed between the plurality of vertical nanosheets, wherein each such first inner dielectric spacer is disposed in contact with two otherwise adjacent vertical nanosheets.
1 more element
Dependencies are inferred from the claim text.